Research on GaN-based light-emitting high electron mobility transistors with an embedded metal-insulator-semiconductor gate structure and their application in 2T1C active pixel circuits

This study investigates a 2T1C active-matrix pixel circuit composed of the GaN-based High Electron Mobility Transistor (HEMT) and Light-Emitting High Electron Mobility Transistor. Compared to the traditional thin-film transistor used in pixel circuits, HEMT features high electron mobility and high current density, which can effectively enhance the light output power and the refresh rate of display. Two different types of enhancement-mode transistors were studied as the driving transistors. The first is a P-GaN gate structure, which features simple fabrication and stable operation; the second is a recessed metal–insulator–semiconductor (MIS) gate structure, which effectively suppresses the off-state current and improves the voltage retention capability of the storage capacitor. Ultimately, this work successfully verifies that both structures can serve as robust driving circuits for 2T1C pixels, demonstrating great potential for the development of high-performance GaN-based display technologies.