Sustainable Development Goals
Abstract/Objectives
Various devices of optoelectronic semiconductors are necessary for implementing smart network. But there are several issues about expensive cost, consuming a lot of energy, using rare or toxic elements with most photosensor. Therefore, finding the replacement material is an urgent topic of material development. The bandgaps of different metal oxides vary from 1.2 eV to 8.8 eV, providing three different electrical properties, such as insulators, semiconductors and conductors. Multi-element metal oxides also exhibit high stability and various photoelectric properties, which show a high potential to solve the problems mentioned above. In this work, a non-toxic, highly efficient, low-cost, and environmentally friendly multi-elements metal oxide has been synthesized. It is expected that this novel multi-element metal oxide material can be applied to photosensor devices. (source: https://www.sciencedirect.com/science/article/abs/pii/S0921510721000866)
Results/Contributions

A nonstoichiometric Sn37Mn10Ni53Ox thin film was synthesized successfully by thermal evaporator. The as-deposited Sn37Mn10Ni53Ox thin film demonstrated with higher absorption at 400 - 800 nm visible light regions, especially near 400 nm and an absorption coefficient of 1.15 x 106 cm−1. The PL spectra also revealed a peak intensity at 445 nm (~ 2.78 eV). The sandwich structure of p+-Si/Sn37Mn10Ni53Ox thin film/ITO photosensor device with post-annealing at 200 °C in Ar was fabricated. It exhibited a superior responsivity (Rres) of 11.5 A/W at 460 nm and a fast time response of photocurrent (tr = 41.2 ms, tf = 41.6 ms) at 1.0 V bias voltage. The fast photo response was suspected to be attributed to the variation of junction barrier height upon light on-and-off. The unique optoelectronic properties of the Sn37Mn10Ni53Ox thin film and its superior photosensor characteristics including responsivity and time response hold the potential for future photodetection applications.

(source: https://www.sciencedirect.com/science/article/abs/pii/S0921510721000866)

Keywords
optoelectronic semiconductormetal oxidephotosensor
References
1. https://www.sciencedirect.com/science/article/abs/pii/S0921510721000866)

Chia-Tung Kuo, Yu-Ying Chu, Han-Yi Chen, and Tri-Rung Yew*, Tin-Manganese-Nickel Oxide Thin Films Prepared by Thermal Evaporation for Photosensor Applications, Materials Science and Engineering: B, 2021, 268C, 115126, 1–8.