Sustainable Development Goals
Abstract/Objectives
This five-year project plans to conduct in-depth research on the components and arrays of high-density three-dimensional Via-RRAM, which has the potential to reach 1.6 (Gb/mm2) ultra-high-density three-dimensional non-volatile resistive memory in the FinFET process. This project contains three subprojects, which are the development of high-density 3D Via-RRAM devices and arrays in advanced technology, the application of high-speed neuromorphic computing circuits, and the in-situ growth of low-resistance conducting wires. The research topic covers memory device innovations, applications of chips, and new materials. The overall goal is to use a five-layer Via-RRAM up to 1.6Gbit/mm2 density 2M test array of physical chip testing, integrated testing with graphene copper wire structure, reduce the resistance of high-density three-dimensional wiring architecture, and maintain high-speed memory chip operation.
Results/Contributions

High-density Via-RRAM was designed and developed in 16nm logic process, and the memory density could reach 0.1 (Gb/mm2) in the 1T10R architecture. Multi-Level Cell (MLC) was also verified, which could further increase the memory density of the RRAM.  

Also, neuromorphic computing is the application of high-density memory. A single-layer latch and embedded artificial synaptic device (eASD) were designed and verified. Different weights of the states were represented by output currents. The architecture will be realized by Via-RRAM in the future. 

Moreover, to further increase the memory density, in-situ growth of carbon material on copper wires with 100nm-width was developed, and the technique was verified on the FinFET BEOL chip. After replacing the carbon source, the process temperature reduces significantly to 400°C. The study about low-temperature in-situ growth of low-resistance carbon on sub-100nm width copper wire will continue developing in the future.

Keywords
3D stackablelogic NVMVia RRAMcomplementary latchFinFET process
Contact Information
金雅琴
ycking@ee.nthu.edu.tw