In LIB part, our group conducted detailed studies on voltage hysteresis and electrolyte effect in oxide anodes. The voltage hysteresis was analyzed by electrochemical analyses and molecular dynamic simulation on LIB half-cells using Mn3O4 as an anode material. It was observed that the voltage hysteresis could be resulted from reaction and intrinsic overpotentials, both of them were related to the diffusion behaviors. The effect of four different electrolytes on LIBs with MnO2 as anode was studied. It was observed that FEC could provide a buffer layer for the volume expansion of MnO2. In addition, FEC could also effectively prevent the thickening of the SEI layer and improve the cycling performance.
In photodetector part, our group successfully fabricated three kinds of materials with good photoelectric performance, including Co-doped Zn-Fe oxide, Sn-Mn-Ni oxide, and Cu-Mg-Ni-Zn-Mn oxide. They all showed faster reaction time and higher photoconductivity gain than other oxide materials. In the future, it can also be applied to solar cell absorbent layers and other optoelectronics after optimization.
In transparent conducting thin film part, our group successfully fabricated Cu-doped Zn-Sn oxide with > 90% transparency. The thin film also showed the good performance of resistivity as 8.68 x 10-3 Ω-cm. According to the findings above, it provides a good potential to improve the properties of p-type transparent conducting films with further doping concentration and process optimization.